Method for manufacturing dynamic random access memory capable of increasing the storage capacity of the capacitor
US5994197A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | May 27, 1999 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | May 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method for manufacturing the capacitor of a dynamic random access memory cell. The method includes the steps of first providing a substrate having field effect transistors thereon, and then forming a dielectric layer over the substrate. Next, a contact opening that exposes the source/drain region is formed in the dielectric layer, and then conductive material is deposited over the substrate, filling the contact opening to form a conductive layer. Thereafter, the conductive layer is patterned, and then a portion of the exposed dielectric layer is removed to form trenches that surround the conductive layer. In the subsequent step, conductive spacers are formed on the sidewalls of the trenches and the conductive layer. The conductive spacers and the conductive layer form the lower electrode structure of a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.