Threshold voltage tailoring of the corner of a MOSFET device
US5994202A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1997 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Jan 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor MOSFET device is formed on a silicon substrate which includes trenches filled with Shallow Trench Isolation dielectric trench fill structures and extending above the surface of the substrate. The trench fill structures have protruding sidewalls with channel regions in the substrate having corner regions adjacent to the trench fill structures. The channel regions are between and adjacent to the STI trench fill structures doped with one concentration of dopant in the centers of the channel regions with a higher concentration of dopant in the corner regions. The dopant concentration differential provides a substantially equal concentration of electrons in the centers and at the corner regions of the channel regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.