Surface treatment of low-k SiOF to prevent metal interaction
US5994778A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1998 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Sep 18, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for using low dielective SiOF in a process to manufacture semiconductor products, comprising the steps of: obtaining a layer of SiOF; and depleting fluorine from a surface of the SiOF layer. In a preferred embodiment, the depleting step comprises the step of treating the surface of the layer of SiOF with a plasma containing hydrogen. It is further preferred that the treated surface be passivated. The invention also encompasses a semiconductor chip comprising an integrated circuit with at least a first and second layers, and with a dielective layer of SiOF disposed between the layers, wherein the SiOF dielective layer includes a first region at one edge thereof which is depleted of fluorine to a predetermined depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.