Substrate having uniform tungsten silicide film and method of manufacture
US5997950A · kind A · utility
13Cited by
7References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl.sub.2 H.sub.2 and (ii) tungsten source gas, such as WF.sub.6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSi.sub.x layer on the substrate, so that the tungsten to silicon ratio of the WSi.sub.x layer is substantially uniform through the thickness of the WSi.sub.x film. An apparatus for performing the process is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.