Method and apparatus for measuring critical dimensions on a semiconductor surface
US6000281A · kind A · utility
17Cited by
8References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 4, 1998 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A combined atomic force microscope and stylus profilometer adapted to measure critical dimensions on a surface. The stylus profilometer is placed at a first position sufficiently near an edge of a first feature and the atomic force microscope subsequently measures the distance from this first position to the edge. The stylus profilometer is then positioned at a second position sufficiently near an edge of a second feature, measuring the distance from the first position to the second position. The atomic force microscope then measures the distance from the second position to the edge of the second feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.