Method and apparatus for improving film stability of halogen-doped silicon oxide films
US6001728A · kind A · utility
23Cited by
10References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1996 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Mar 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.