Anand Gupta
69Patents
19h-index
71Co-inventors
87Inventor score
Filing activity: May 11, 1990 → Mar 6, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6125789A | Increasing the sensitivity of an in-situ particle monitor | Physics | 537 | Expired |
| US6374770B1 | Apparatus for improving film stability of halogen-doped silicon oxide films | Electricity | 151 | Expired |
| US6191026A | Method for submicron gap filling on a semiconductor substrate | Electricity | 117 | Expired |
| US6809809B2 | Optical method and apparatus for inspecting large area planar objects | Physics | 69 | Expired |
| US5824375A | Decontamination of a plasma reactor using a plasma after a chamber clean | Chemistry; Metallurgy | 52 | Expired |
| US5456796A | Control of particle generation within a reaction chamber | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6103601A | Method and apparatus for improving film stability of halogen-doped silicon oxide films | Electricity | 46 | Expired |
| US5827785A | Method for improving film stability of fluorosilicate glass films | Electricity | 43 | Expired |
| US5328555A | Reducing particulate contamination during semiconductor device processing | Emerging Cross-Sectional Technologies | 39 | Expired |
| US6020035A | Film to tie up loose fluorine in the chamber after a clean process | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5494523A | Controlling plasma particulates by contouring the plasma sheath using materials of differing RF impedances | Electricity | 34 | Expired |
| US5083865A | Particle monitor system and method | Physics | 29 | Expired |
| US6449521B1 | Decontamination of a plasma reactor using a plasma after a chamber clean | Chemistry; Metallurgy | 28 | Expired |
| US5427621A | Method for removing particulate contaminants by magnetic field spiking | Electricity | 26 | Expired |
| US5608155A | Method and apparatus for detecting particles on a substrate | Physics | 24 | Expired |
| US5423918A | Method for reducing particulate contamination during plasma processing of semiconductor devices | Electricity | 23 | Expired |
| US5622565A | Reduction of contaminant buildup in semiconductor apparatus | Electricity | 23 | Expired |
| US6001728A | Method and apparatus for improving film stability of halogen-doped silicon oxide films | Electricity | 23 | Expired |
| US5410122A | Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers | Electricity | 20 | Expired |
| US5810937A | Using ceramic wafer to protect susceptor during cleaning of a processing chamber | Chemistry; Metallurgy | 19 | Expired |
| US5779807A | Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers | Electricity | 19 | Expired |
| US5622595A | Reducing particulate contamination during semiconductor device processing | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5954888A | Post-CMP wet-HF cleaning station | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6223685A | Film to tie up loose fluorine in the chamber after a clean process | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5578131A | Reduction of contaminant buildup in semiconductor processing apparatus | Electricity | 15 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.