Method of manufacturing semiconductor device and an apparatus for manufacturing the same
US6001736A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 4, 1996 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Mar 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.