Method for manufacturing bonded wafer and bonded wafer manufactured thereby
US6004866A · kind A · utility
44Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a bonded wafer comprises the steps of; mirror-polishing a surface of first and second substrates, bringing the mirror-polished surfaces of the substrates contact with each other to join them, and subjecting the substrates to a heat treatment to firmly bond them. One of the surfaces of the first and second substrates prior to bonding, or one surface of the bonded wafer is subjected to a polishing treatment for exerting little influence by irregularities on a rear surface of the one substrate or by a figure of a surface of a polishing plate which is in contact with the rear surface of the one substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.