Method of manufacturing semiconductor device
US6004872A · kind A · utility
6Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Oct 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, comprises the steps of, preparing a silicon substrate having a source region, a drain region, a gate electrode and an SiO.sub.2 film formed on one surface, depositing titanium on the one surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, so that the TiSi.sub.2 layer covers the source and drain regions and gate electrode, and a Ti layer covers the SiO.sub.2 film. The Ti layer formed on the SiO.sub.2 film is removed by a selective etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.