Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films
US6005127A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Nov 24, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An antimony/Lewis base adduct of the formula SbR.sub.3.L, wherein each R is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 perfluoroalkyl, C.sub.1 -C.sub.8 haloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.6 -C.sub.10 perfluoroaryl, C.sub.6 -C.sub.10 haloaryl, C.sub.6 -C.sub.10 cycloalkyl, substituted C.sub.6 -C.sub.10 aryl and halo; and L is a Lewis base ligand coordinating with SbR.sub.3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.