Michael A. Todd
50Patents
20h-index
33Co-inventors
88Inventor score
Filing activity: Feb 26, 1979 → Jul 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7297641B2 | Method to form ultra high quality silicon-containing compound layers | Electricity | 593 | Expired |
| US6743738B2 | Dopant precursors and processes | Emerging Cross-Sectional Technologies | 573 | Expired |
| US6458718B1 | Fluorine-containing materials and processes | Electricity | 257 | Expired |
| US6821825B2 | Process for deposition of semiconductor films | Emerging Cross-Sectional Technologies | 240 | Expired |
| US6630413B2 | CVD syntheses of silicon nitride materials | Electricity | 113 | Expired |
| US7294582B2 | Low temperature silicon compound deposition | Electricity | 97 | Expired |
| US7651953B2 | Method to form ultra high quality silicon-containing compound layers | Electricity | 75 | Active |
| US7425350B2 | Apparatus, precursors and deposition methods for silicon-containing materials | Emerging Cross-Sectional Technologies | 74 | Expired |
| US7964513B2 | Method to form ultra high quality silicon-containing compound layers | Electricity | 72 | Active |
| US6900115B2 | Deposition over mixed substrates | Emerging Cross-Sectional Technologies | 70 | Expired |
| US6962859B2 | Thin films and method of making them | Emerging Cross-Sectional Technologies | 70 | Expired |
| US6958253B2 | Process for deposition of semiconductor films | Emerging Cross-Sectional Technologies | 50 | Expired |
| US7186630B2 | Deposition of amorphous silicon-containing films | Electricity | 45 | Expired |
| US7026219B2 | Integration of high k gate dielectric | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6716713B2 | Dopant precursors and ion implantation processes | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6005127A | Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films | Chemistry; Metallurgy | 30 | Expired |
| US6146608A | Stable hydride source compositions for manufacture of semiconductor devices and structures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4333562A | Capsule for storing written information | Performing Operations; Transporting | 23 | Expired |
| US7029995B2 | Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy | Electricity | 22 | Expired |
| US6319565A | Stable hydride source compositions for manufacture of semiconductor devices and structures | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6716751B2 | Dopant precursors and processes | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6818570B2 | Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6825130B2 | CVD of porous dielectric materials | Electricity | 16 | Expired |
| US7273799B2 | Deposition over mixed substrates | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7186582B2 | Process for deposition of semiconductor films | Emerging Cross-Sectional Technologies | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.