Ultra shallow junction formation using amorphous silicon layer
US6008098A · kind A · utility
22Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1996 |
| Grant date | Dec 28, 1999 |
| Priority date | — |
| Expiry date | Oct 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of achieving shallow junctions in a semiconductor device is achieved by providing an amorphous silicon layer over an epitaxial layer, implanting ions into the amorphous silicon layer, and annealing the resulting device to recrystallize the amorphous silicon layer and drive in the implanted ions to a shallow depth less than the depth of the amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.