Independent gas feeds in a plasma reactor
US6009830A · kind A · utility
70Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1997 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Nov 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.