Photoresist and polymer removal by UV laser aqueous oxidant
US6009888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1998 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | May 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.