Chemically amplified resist compositions and process for the formation of resist patterns
US6013416A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1996 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Jun 27, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.