Zirconium and/or hafnium oxynitride gate dielectric
US6013553A · kind A · utility
808Cited by
15References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1998 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Jul 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02249
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.