Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6013584A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and methods for forming a dielectric layer, such as PSG, that exhibits low moisture content, good gap fill capability, good gettering capability, and compatibility with planarization techniques. The PSG film deposited using the apparatus and methods of the present invention are particularly suitable for use as a PMD layer. According to one embodiment, the present invention provides a process for depositing a film on a substrate disposed on a pedestal in a processing chamber. The process includes introducing a process gas into said processing chamber, where the process gas includes SiH.sub.4, PH.sub.3, O.sub.2, and argon. The process also includes controlling the temperature of the pedestal to between about 400-650.degree. C. during a first time period, maintaining a pressure ranging between about 1-10 millitorr in the processing chamber during the first time period. In addition, the process includes applying power to an inductively coupled coil to form a high density plasma from the process gas in the processing chamber during the first time period, and biasing the plasma toward the substrate to promote a sputtering effect of the plasma and deposit the phosphosilicate …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.