Inventor · Santa Clara, CA, US

Hichem M'Saad

77Patents
21h-index
123Co-inventors
91Inventor score

Filing activity: Feb 19, 1997 → Oct 1, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7018941B2 Post treatment of low k dielectric films Electricity 648 Expired
US8445075B2 Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics Electricity 500 Active
US8129290B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure Electricity 474 Active
US7501355B2 Decreasing the etch rate of silicon nitride by carbon addition Electricity 465 Active
US8138104B2 Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure Electricity 458 Active
US7692171B2 Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors Physics 451 Active
US6013584A Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications Electricity 293 Expired
US7049200B2 Method for forming a low thermal budget spacer Electricity 228 Expired
US7871926B2 Methods and systems for forming at least one dielectric layer Electricity 77 Active
US7064078B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme Electricity 76 Expired
US6399489B1 Barrier layer deposition using HDP-CVD Emerging Cross-Sectional Technologies 66 Expired
US6121161A Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions Chemistry; Metallurgy 60 Expired
US7112541B2 In-situ oxide capping after CVD low k deposition Electricity 56 Expired
US10774423B2 Tunable ground planes in plasma chambers Electricity 37 Active
US6713390B2 Barrier layer deposition using HDP-CVD Emerging Cross-Sectional Technologies 36 Expired
US7030041B2 Adhesion improvement for low k dielectrics Electricity 34 Expired
US7572337B2 Blocker plate bypass to distribute gases in a chemical vapor deposition system Electricity 28 Active
US6413871B1 Nitrogen treatment of polished halogen-doped silicon glass Electricity 25 Expired
US7663121B2 High efficiency UV curing system Electricity 23 Active
US6853043B2 Nitrogen-free antireflective coating for use with photolithographic patterning Chemistry; Metallurgy 21 Expired
US7407893B2 Liquid precursors for the CVD deposition of amorphous carbon films Electricity 21 Expired
US7638440B2 Method of depositing an amorphous carbon film for etch hardmask application Physics 20 Active
US7678662B2 Memory cell having stressed layers Electricity 18 Active
US7670924B2 Air gap integration scheme Emerging Cross-Sectional Technologies 17 Active
US7566655B2 Integration process for fabricating stressed transistor structure Electricity 15 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.