Semiconductor structure having a doped conductive layer

US6015997A · kind A · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Yongjun Jeff Hu · Boise, US
• Pai-Hung Pan · Boise, US
• Er-Xuan Ping · Boise, US
• Randhir P. S. Thakur · Boise, US
• Scott DeBoer · Boise, US

Key dates

• Filing date: Feb 19, 1997
• Grant date: Jan 18, 2000
• Expiry date: Feb 19, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/664
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for forming word line stacks comprise one, or a combination of the following: a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer; an amorphous silicon diffusion barrier coupled between a polysilicon layer and a conductor layer; a thin nitride layer coupled between a bottom silicon layer and a titanium silicide conductor layer, and a bottom silicon layer coupled to a conductor layer, which comprises C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.