Feedback method to repair phase shift masks
US6016357A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1997 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Jun 16, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of repairing a semiconductor phase shift mask comprises first providing a semiconductor mask having a defect and then illuminating the mask to create an aerial image of the mask. Subsequently, the aerial image of the mask is analyzed and the defect in the mask is detected from the aerial image. An ideal mask image is defined and compared to the aerial image of the defective mask to determine the repair parameters. Unique parameters for repairing the mask defect are determined by utilizing the aerial image analysis and a look-up table having information on patch properties as a function of material deposition parameters. The mask is then repaired in accordance with the parameters to correct the mask defect. A patch of an attenuated material may be applied to the mask or a predetermined amount of material may be removed from the mask. The aerial image of the repair is analyzed to determine whether the repair sufficiently corrects the defect within predetermined tolerances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.