Gas flow control in a substrate processing system
US6016611A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Jul 13, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing system can include an evacuable chamber adjacent a process chamber and back-to-back process chambers, or other combinations of evacuable chambers and process chambers. The processing system includes various isolation valves disposed between adjacent chambers, as well as gas flow valves and vacuum valves. A controller controls the respective positions of the various gas flow valves and vacuum valves depending, in part, on whether the various isolation valves are in their open or sealed positions. By controlling the positions of the valves, the flow of gas to and from the different chambers can be controlled, for example, to help maximize throughput, increase efficiency, and reduce the likelihood of cross-contamination between chambers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.