Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer
US6017144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1996 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Oct 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures T.sub.s, within a first lower range of temperatures .DELTA. T.sub.s, and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures T.sub.d, within a second higher range of temperatures .DELTA. T.sub.D, and deposition gas is introduced into the process zone. The deposition gas forms an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface that results from highly oriented, relatively large crystals that grow on the seeding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.