Ted Guo
38Patents
17h-index
31Co-inventors
81Inventor score
Filing activity: Nov 21, 1995 → Mar 15, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6656831B1 | Plasma-enhanced chemical vapor deposition of a metal nitride layer | Electricity | 250 | Expired |
| US5989623A | Dual damascene metallization | Electricity | 109 | Expired |
| US6139697A | Low temperature integrated via and trench fill process and apparatus | Electricity | 79 | Expired |
| US6207222A | Dual damascene metallization | Electricity | 79 | Expired |
| US6001420A | Semi-selective chemical vapor deposition | Emerging Cross-Sectional Technologies | 62 | Expired |
| US5877087A | Low temperature integrated metallization process and apparatus | Electricity | 51 | Expired |
| US5763010A | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers | Electricity | 39 | Expired |
| US6458684B1 | Single step process for blanket-selective CVD aluminum deposition | Electricity | 36 | Expired |
| US6066358A | Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer | Electricity | 33 | Expired |
| US6120844A | Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer | Electricity | 33 | Expired |
| US6169030A | Metallization process and method | Electricity | 31 | Expired |
| US6017144A | Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer | Electricity | 29 | Expired |
| US6080665A | Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum | Electricity | 28 | Expired |
| US6110828A | In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization | Electricity | 28 | Expired |
| US6528180B1 | Liner materials | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7824743B2 | Deposition processes for titanium nitride barrier and aluminum | Electricity | 22 | Active |
| US6537905B1 | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug | Electricity | 20 | Expired |
| US7867900B2 | Aluminum contact integration on cobalt silicide junction | Electricity | 17 | Active |
| US6139905A | Integrated CVD/PVD Al planarization using ultra-thin nucleation layers | Electricity | 14 | Expired |
| US5956608A | Modulating surface morphology of barrier layers | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6079354A | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers | Electricity | 11 | Expired |
| US7112528B2 | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug | Electricity | 9 | Expired |
| US6430458B1 | Semi-selective chemical vapor deposition | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6077781A | Single step process for blanket-selective CVD aluminum deposition | Electricity | 8 | Expired |
| US6509274B1 | Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.