Thin film transistor and method of forming thin film transistors
US6017782A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Jul 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes: a) a thin film transistor layer comprising a source region, a channel region and a drain region; the thin film transistor layer further comprising a drain offset region positioned between the drain region and the channel region; b) the channel region being substantially polycrystalline and having a first average crystalline grain size; and c) the drain offset region being substantially polycrystalline and having a second average crystalline grain size, the second average crystalline grain size being larger than the first average crystalline grain size. A method for forming such a construction using polycrystalline materials, preferably polysilicon, and an amorphizing silicon implant with subsequent recrystallization is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.