Method of fabricating A1N anti-reflection coating on metal layer
US6017816A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1997 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Feb 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating notching free metal interconnection lines by utilizing aluminum nitride (AlN) as an anti-reflection coating. First, field oxide regions are formed on a semiconductor silicon wafer. Then, electrical element structures such as transistor, capacitor and resistor are formed on the predetermined area. Next, a barrier layer, a metal layer and an anti-reflection layer are successively deposited overlaying the entire silicon wafer surface. Next, the photoresist pattern is formed by the conventional lithography technique. By using photoresist pattern as an etching protection mask, the barrier layer, metal layer and anti-reflection layer are also patterned to form metal interconnection lines. Thereafter, the photoresist is stripped by oxygen plasma and sulfuric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.