Chlorine containing plasma etch method with enhanced sidewall passivation and attenuated microloading effect
US6017826A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Oct 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a patterned layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket chlorine containing plasma etchable layer. There is then formed upon the blanket chlorine containing plasma etchable layer a blanket hard mask layer. There is then formed upon the blanket hard mask layer a patterned photoresist layer. There is then etched the blanket hard mask layer to form a patterned hard mask layer while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer. There is then etched the blanket chlorine containing plasma etchable layer to form a patterned chlorine containing plasma etchable layer while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer. The second plasma etch method employs a second etchant gas composition which upon plasma activation forms a chlorine containing etchant species and a sidewall passivation layer forming species. The patterned chlorine containing plasma etchable layer has incident to the second plasma etch method a sidewall passivation laye…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.