Zirconium and/or hafnium silicon-oxynitride gate dielectric
US6020243A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1998 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Jul 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02249
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.