Silicon carbide semiconductor device with trench
US6020600A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 26, 1997 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Sep 26, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n.sup.+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n.sup.+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n.sup.- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n.sup.+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n.sup.- type silicon carbide semiconductor layer 2 in the side face of the trench 9. A gate electrode layer 13 is disposed through a gate insulating layer 12 within the trench 9. A source electrode layer 15 is provided on the surface of the p type silicon carbide semiconductor layer 3 and on the surface of the n.sup.+ type source region …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.