Complementary material conditioning system for a chemical mechanical polishing machine
US6022265A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Jun 19, 2018 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B53/013
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A complementary conditioning system for use in chemical mechanical polishing (CMP). The present invention functions with a CMP machine adapted for polishing a semiconductor wafer having tungsten components fabricated thereon. A polishing pad is mounted on the CMP machine. The polishing pad has a polishing surface configured for polishing the semiconductor wafer and its tungsten components. The performance of the polishing surface is characterized by a polishing efficiency. A complementary end-effector is mounted on the CMP machine. The complementary end-effector is adapted to chemically complement the tungsten components on the semiconductor wafer. The complementary end-effector is further adapted to contact the polishing surface and improve the polishing efficiency by chemically enhancing the polishing surface, thereby obtaining a more efficient removal rate for the chemical mechanical polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.