Chemical vapor deposition manifold
US6024799A · kind A · utility
574Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Jul 11, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A manifold for use in a chemical vapor deposition reactor, optimized for providing effective deposition on a substrate of a specific diameter. The manifold has upstream and downstream faces and is of substantially circular shape, with a central region of the downstream face being perforated by a plurality of upstream-directed bores. The central region is substantially larger than a circle of the specific wafer diameter for which the reactor is optimized. A centrally located plurality of the bores are through-bores or holes to the upstream face of the manifold that define a gas flow path from an upstream gas source to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.