Apparatus and methods of forming preferred orientation-controlled platinum films using nitrogen
US6025205A · kind A · utility
23Cited by
31References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1998 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Jan 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Platinum film orientation-controlled to (111), (200) and/or (220) are provided by depositing the platinum film under an atmosphere containing nitrogen as well as an inert gas (Ar, Ne, Kr, Xe) on a substrate heated to temperature ranged from room temperature to 500.degree. C., and then annealing to substantially remove nitrogen introduced into the platinum film during the deposition thereof. The platinum film formed in this process has an excellent electrical conductivity (resistivity is lower than 15 .mu..OMEGA.-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, pores or pinholes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.