Method of etching ceramics of alumina/TiC with high density plasma
US6027660A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 1998 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | May 11, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching a first surface on the ceramic slider using an etchant gas. The etchant gas generally includes argon, and a fluorine containing gas. The power source density, during etching ranges from about 0.5 W/(cm.sup.2) to 8 W/(cm.sup.2). Another aspect of the invention is a ceramic slider resulting from the method of the invention having a smoothness ranging from about 20 to 300 .ANG. as measured by atomic force microscopy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.