Method for achieving accurate SOG etchback selectivity
US6027950A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1997 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Aug 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preventing oxygen microloading of an SOG layer. In one embodiment of the present invention, hydrogen is introduced into an etching environment. An etching step is then performed within the etching environment. During the etching step an SOG layer overlying a TEOS layer is etched until at least a portion of the underlying TEOS layer is exposed. The etching step continues and etches at least some of the exposed portion of the TEOS layer. During etching, the etched TEOS layer releases oxygen. The hydrogen present in the etching environment scavenges the released oxygen. As a result, the released oxygen does not microload the SOG layer. Thus, the etchback rate of the SOG layer is not significantly affected by the released oxygen, thereby allowing for controlled etchback of the SOG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.