Semiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium film
US6028360A · kind A · utility
68Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1998 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.