Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
US6030849A · kind A · utility
43Cited by
0References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1998 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Jun 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.