Photoresist stripping without degrading low dielectric constant materials
US6030901A · kind A · utility
81Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1999 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Jun 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Photoresist masks are stripped using a H.sub.2 -N.sub.2 plasma to prevent increasing the dielectric constant of an exposed carbon-containing dielectric material. Embodiments of the present invention include forming a low dielectric constant, carbon-containing layer, e.g., a polymeric layer, on an exposed metal feature overlying a wafer, forming a photoresist mask on the dielectric layer, forming an opening in the dielectric layer exposing the metal feature and a portion of the dielectric layer, preheating the wafer and stripping the photoresist mask using the H.sub.2 -N.sub.2 plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.