Lu You
89Patents
21h-index
88Co-inventors
87Inventor score
Filing activity: Oct 9, 1992 → Sep 23, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6893967B1 | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials | Electricity | 230 | Expired |
| US6773998B1 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Electricity | 157 | Expired |
| US6147000A | Method for forming low dielectric passivation of copper interconnects | Electricity | 106 | Expired |
| US6030901A | Photoresist stripping without degrading low dielectric constant materials | Electricity | 81 | Expired |
| US6066574A | Hot plate cure process for BCB low k interlevel dielectric | Electricity | 57 | Expired |
| US6518167B1 | Method of forming a metal or metal nitride interface layer between silicon nitride and copper | Electricity | 49 | Expired |
| US5268202A | Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene | Chemistry; Metallurgy | 45 | Expired |
| US6407009B1 | Methods of manufacture of uniform spin-on films | Electricity | 43 | Expired |
| US6764949B2 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Electricity | 42 | Expired |
| US6235453A | Low-k photoresist removal process | Electricity | 39 | Expired |
| US6259115A | Dummy patterning for semiconductor manufacturing processes | Electricity | 38 | Expired |
| US6566283B1 | Silane treatment of low dielectric constant materials in semiconductor device manufacturing | Electricity | 33 | Expired |
| US6750127B1 | Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance | Electricity | 31 | Expired |
| US6756672B1 | Use of sic for preventing copper contamination of low-k dielectric layers | Electricity | 31 | Expired |
| US6586842B1 | Dual damascene integration scheme for preventing copper contamination of dielectric layer | Electricity | 30 | Expired |
| US6207552A | Forming and filling a recess in interconnect for encapsulation to minimize electromigration | Electricity | 29 | Expired |
| US6653735B1 | CVD silicon carbide layer as a BARC and hard mask for gate patterning | Electricity | 28 | Expired |
| US6900002B1 | Antireflective bi-layer hardmask including a densified amorphous carbon layer | Electricity | 25 | Expired |
| US6225240A | Rapid acceleration methods for global planarization of spin-on films | Electricity | 24 | Expired |
| US6713874B1 | Semiconductor devices with dual nature capping/arc layers on organic-doped silica glass inter-layer dielectrics | Electricity | 22 | Expired |
| US6875664B1 | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material | Electricity | 21 | Expired |
| US6530340B2 | Apparatus for manufacturing planar spin-on films | Physics | 19 | Expired |
| US6100181A | Low dielectric constant coating of conductive material in a damascene process for semiconductors | Electricity | 19 | Expired |
| US6518646B1 | Semiconductor device with variable composition low-k inter-layer dielectric and method of making | Electricity | 19 | Expired |
| US6677679B1 | Use of SiO2/Sin for preventing copper contamination of low-k dielectric layers | Electricity | 19 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.