Extreme ultraviolet lithography machine
US6031598A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1998 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Sep 25, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70991
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.