Method and circuit for substrate current induced hot e-injection (SCIHE) approach for V.sub.T convergence at low V.sub.cc voltage
US6031766A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1999 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Apr 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3445
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for soft programming memory cells and floating gate memory device. During soft programming, a gate voltage is supplied to the control gate, a drain voltage it supplied to the drain, a well voltage is supplied to the well, and an active current limiter is coupled to the source. A circuit for soft programming supplies a gate voltage to the control gate, couples a constant current source to the drain, supplies a well voltage to the well, and supplies a source voltage to the source. The gate voltage may be approximately 2 V, the drain voltage may be approximately 4 V, and the well voltage may be approximately -2 V. According to another embodiment of the invention, the gate voltage is approximately 2 V lower than the drain voltage, and the well voltage is approximately 4 V lower than the gate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.