Method for providing electrically fusible links in copper interconnection
US6033939A · kind A · utility
83Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1998 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Apr 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for the fabrication of fuses within a semiconductor IC structure, which fuses are delectable by a laser pulse or a low voltage electrical pulse typically below 3.5 V to reroute the electrical circuitry of the structure to remove a faulty element. The fuses are formed on the surface of circuitry which is coplanar with a surrounding dielectric such as the circuitry formed by a Damascene method. A preferred fuse material is silicon-chrome-oxygen and the preferred circuitry is copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.