Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture
US6033955A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 23, 1998 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Sep 23, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming flexibly partitioned metal line segments 10 and 12 for separate memory banks in a simultaneous operation flash memory device with a flexible bank partition architecture comprises the steps of providing a basic metal layer 2 comprising a plurality of basic metal layer segments 2a, 2b, 2c, . . . 2j separated by a plurality of gaps 6a, 6b, 6c, . . . 6i, each of the gaps having a predefined gap interval length, and providing a metal option layer 8 comprising a plurality of metal option layer segments on the basic metal layer 2, the metal option layer segments overlapping the gaps between the basic metal layer segments but leaving one of the gaps open, to form the metal line segments for the separate memory banks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.