Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
US6033996A · kind A · utility
26Cited by
47References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1997 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Nov 13, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.