Method of fabricating capacitor
US6037234A · kind A · utility
23Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a capacitor in a DRAM. A semiconductor substrate having a metal-oxide-semiconductor is provided. Using only one photolithography process, a bottom electrode is formed. By forming a dielectric layer over the substrate, and a poly-silicon layer on the dielectric layer, a capacitor is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.