Method of making hetero-structure
US6037242A · kind A · utility
3Cited by
6References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Jul 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing an AlInAs/GaAs hetero-structure includes forming an Al.sub.1-x In.sub.x As (0<x<1) buffer layer in an amorphous state on a GaAs substrate, annealing the amorphous buffer layer to crystallize the buffer layer into a single crystal buffer layer, and forming a single crystal Al.sub.1-x' In.sub.x' As (0<x'<1) active layer on the single crystal buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.