Method of manufacturing a semiconductor device using advanced contact formation
US6037244A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Mar 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device by using a pillar to form a contact with an active region of the device. A semiconductor device is formed by forming one or more active regions on a substrate of the semiconductor device and forming a pillar over at least a portion of one of the active regions. An insulating film selective to the pillar is provided over portions of the substrate adjacent the pillar. The pillar is then used to form a conductive contact with the active region over which it is formed. In one embodiment, the pillar is formed from a photoresist, while in other embodiments, the pillar is formed from a conductor material such as a metal. The active region may form a source/drain region or a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.