Etchant gas and a method for etching transistor gates
US6037265A · kind A · utility
29Cited by
4References
91Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1998 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Feb 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device from a silicon substrate supporting a patterned hardmask layer, a tungsten silicide layer, a polysilicon layer, and a gate oxide layer. The method comprises etching the tungsten silicide layer and the polysilicon layer with an etchant gas comprising carbon monoxide (CO) and chlorine (Cl.sub.2). The etchant gas may also include hydrogen bromide (HBr) or a nitrogen-containing gas (e.g., N.sub.2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.