Measurement of electrical characteristics of semiconductor wafer
US6037781A · kind A · utility
6Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1998 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Mar 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
C-V measurement is first carried out with respect to a target area on a semiconductor wafer using a measuring electrode located over the target area. Parameters used for C-t measurement of the target area (for example, applied voltages Vacc and Vmeas or a recovery time Tr) are then obtained from a C-V characteristic obtained by the C-V measurement. C-t measurement is subsequently carried out with respect to the target area using these parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.