Method of selectively annealing damaged doped regions
US6040019A · kind A · utility
19Cited by
22References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1997 |
| Grant date | Mar 21, 2000 |
| Priority date | — |
| Expiry date | Feb 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor substrate to a depth below the semiconductor substrate; and applying laser energy to the semiconductor substrate at a sufficient magnitude to liquify the semiconductor substrate in the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.