Method for depositing fluorine doped silicon dioxide films
US6042901A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of preparing a moisture-resistant fluorine containing silicon oxide film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber and growing a fluorine-containing silicon oxide film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300.degree. C. The silicon and fluorine reactants can be supplied by separate gases such as SiH.sub.4 and SiF.sub.4 or as a single SiF.sub.4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH.sub.4 and SiF.sub.4 can be supplied in a gas flow ratio of SiH.sub.4 /(SiH.sub.4 +SiF.sub.4) of no greater than 0.5. The process can provide a film with a fluorine content of 2-12 atomic percent and argon can be included in the plasma to assist in gap filling. The plasma can be a high density plasma produced in an ECR, TCP.TM., or ICP reactor and the substrate can be a silicon wafer including one or more metal layers over which the fluorine-containing silicon oxide film is deposited. The substrate support can incl…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.